An Introduction to Thyristors and Their Applications by M. Ramamoorty

By M. Ramamoorty

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3) If this value is more than the dvjdt rating of the SCR, the device will conduct without any external gate signal. Rz/(R. + Rz)] is small enough to maintain the SCR in the off-state. The dvfdt rating of the device can be slightly improved by short-circuiting the gate terminal to the cathode terminal. The circuit shown in Fig. 9b can also be used for conducting the difdt test on the SCR. For this, a small inductor is connected in series with the anode circuit. ·The rate of change of anode current, after the device is triggered, is controlled by varying the initial voltage on the capacitor.

The value of the shunt resistance R is given by R=nVo-Vs. 1) where n is the number of SCRs in series, Vo is the voltage rating of each SCR, Vs is the total voltage across the string, and /a is the maximum blocking current of the SCRs at the rated voltage. This shunt resistance reduces the effect of the different blocking resistances of the SCRs, and thus produces a more uniform voltage distribution. During the turn-on and turn-off periods, corresponding to operating conditions (2) and (5), respectively, because of the transient nature of the voltage and current, a simple resistance divider will not equalise the voltage.

For pulse-firing, the value of permissible Pv. will be higher, and point Scan move further up, thereby providing a harder drive to the gate. The minimum value of gate source series resistance is obtained by drawing line AS tangential to the P,. curve. On a short-term basis, thyristors may be generally considered to be charge-controlled devices. Therefore, for pulse-firing, the gate trigger current bears an inverse ratio to the pulse width. Also, the gate drive has to be maintained till the forward current has reached the latching-current level to sustain internal regeneration.

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